Spin Hall effect at interfaces between HgTe/CdTe quantum wells and metals

We study the spin-dependent transmission through interfaces between a HgTe/CdTe quantum well (QW) and a metal - both for the normal metal and the superconducting case. Interestingly, we discover a new type of spin Hall effect at these interfaces that happens to exist even in the absence of structure and bulk inversion asymmetry within each subsystem (i.e. the QW and the metal). Thus, this is a pure boundary spin Hall effect which can be directly related to the existence of exponentially localized edge states at the interface. We demonstrate how this effect can be measured and functionalized for an all-electric spin injection into normal metal leads.Comment: 7 pages, 6 figure

Interplay of bulk and edge states in transport of two-dimensional topological insulators

We study transport in two-terminal metal/quantum spin-Hall insulator (QSHI)/metal junctions. We show that the conductance signals originating from the bulk and the edge contributions are not additive. While for a long junction the transport is determined by the edge states contribution, for a short junction, the conductance signal is built from both bulk and edge states in the ratio which depends on the width of the sample. Further, in the topological insulator regime the conductance for short junctions shows a non-monotonic behavior as a function of the sample length. Surprisingly this non-monotonic behavior of conductance can be traced to the formation of an effectively propagating solution which is robust against scalar disorder. Our predictions should be experimentally verifiable in HgTe QWs and Bi$_2$Se$_3$ thin films.Comment: 9 pages, 8 figure

How to Distinguish between Specular and Retroconfigurations for Andreev Reflection in Graphene Rings

We numerically investigate Andreev reflection in a graphene ring with one normal conducting and one superconducting lead by solving the Bogoliubov--de Gennes equation within the Landauer-B\"uttiker formalism. By tuning chemical potential and bias voltage, it is possible to switch between regimes where electron and hole originate from the same band (retroconfiguration) or from different bands (specular configuration) of the graphene dispersion, respectively. We find that the dominant contributions to the Aharonov-Bohm conductance oscillations in the subgap transport are of period $h/2e$ in retroconfiguration and of period $h/e$ in specular configuration, confirming the predictions obtained from a qualitative analysis of interfering scattering paths. Because of the robustness against disorder and moderate changes to the system, this provides a clear signature to distinguish both types of Andreev reflection processes in graphene.Comment: 5 pages, 5 figures. arXiv admin note: substantial text overlap with arXiv:1201.620

Signatures of topology in ballistic bulk transport of HgTe quantum wells

We calculate bulk transport properties of two-dimensional topological insulators based on HgTe quantum wells in the ballistic regime. Interestingly, we find that the conductance and the shot noise are distinctively different for the so-called normal regime (the topologically trivial case) and the so-called inverted regime (the topologically non-trivial case). Thus, it is possible to verify the topological order of a two-dimensional topological insulator not only via observable edge properties but also via observable bulk properties. This is important because we show that under certain conditions the bulk contribution can dominate the edge contribution which makes it essential to fully understand the former for the interpretation of future experiments in clean samples.Comment: 5 pages, 4 figure